Michael Schnedler

Michael Schnedler

A member of PGI-5 Institute for Microstructure Research.

Research

Being member of Scanning tunneling microscopy and spectroscopy group, my research is dedicated to following projects:

  • Characterization of novel (ternary) nitride semiconductors by scanning tunneling microscopy (STM) and spectroscopy (STS), e.g. GaN, InN, AlInN, AlGaN, etc.
  • Defects in (light-excited) semiconductors and their influence on the electric properties
  • Investigation of device structures like LEDs by STM
  • III-V compound semiconductor nanowires for future lighting applications or energy harvesting

Publications

Updated list of publication can be found at ORCID and ResearchGate.

Expertise

Tip-induced band bending caused by the electrostatic potential of a STM-tip. Simulation was performed by using our P_SpaceChargeLight software (in-house development)
  • Quantitative STM and STS of III-V compound semiconductors (including nitride-based semiconductors)
  • Sample preparation for STM & STS
  • Simulation of potential & carrier distribution in semiconductors under non-equilibrium conditions
  • Tunnel current simulations (including tip-induced band bending)
  • Principal component analysis
  • Software development (for analysis and simulation) primarily by using Pascal, but also Python, C, PHP, etc.

Contact

Email: m.schnedler@fz-juelich.de

Phone: +49 2461 61 3155

Location: Building 04.6, room 98

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